Sapphire wafer can get excellent surface flatness and roughness by chemical mechanical polishing process.The trajectory equation of abrasive particles in the process of chemical mechanical polishing sapphire wafer was simulated by numerical analysis software.The results show that as the wafer speed increases,the coverage area of abrasive particles on the sapphire wafer surface is increased.When the ratio of chip speed and polishing disk rotational speed is close to 1∶1,the whole face of sapphire wafer is covered by the abrasive particles.The influence of arm swing and the speed of disc on polishing effect was studied by mesns of control variable method,and the surface morphology of sapphire chips was analyzed by AFM.The results indicate that the disc speed has the greatest influence on the polishing effect,while the movement amplitude and movement speed have less influence on the polishing effect.By adjusting the revolving speed,the surface of sapphire wafer after polishing can meet the requirements of the surface flatness and roughness required by the bonding process.