Principles of operation and design of experimental devices of atomized slurry applied CMP were introduced.The polishing effect of atomized slurry applied chemical mechanical polishing(CMP)was investigated by the processing tests and the material removal mechanism was analyzed.The results show that the atomized slurry applied CMP method has high slurry using efficiency,and the consumption of atomized slurry is only 350 mL when realizing the polishing effect of silicon surface roughness less than 38 nm at the material removal rate of 2575 nm/min.The material removal mechanism of atomized slurry applied CMP is the molecular scale removal of the oxidative wear,that is oxidizing the surface atoms and weakening its bonding energy by the chemical function of the oxidizing agent in the polishing atomized liquid, and transferring the energy to the surface molecules by mechanical function of the abrasive particles,thus they will be removed when their energy are greater than that of the bonds.