In order to solve the problems that the low k dielectric/copper interface during planarization process is easy to cause material interface peeling,interconnect damage and larger surface roughness,scholars at home and abroad have carried out a lot of research work on the material removal mechanism and damage mechanism in chemical mechanical polishing process (CMP) process.The experimental and theoretical studies on the mechanical and friction damage characteristics of the low k dielectric/copper interface were reviewed,as well as the study on the material removal behavior of the heterogeneous interface in the process of CMP.The research progress of material removal mechanism during CMP process was introduced.The research trend of the removal mechanism of low k dielectric/copper interface in CMP process was prospected,that is to reveal the the mechanism of material removal and damage formation by studying the molecular and atomic migration behavior of heterogeneous interface,and finally find the methods of heterogeneous surface planarization and damage control.